1 4 - single n-channel mosfet pin no. pin name 1 drain 2 drain 3 gate 4 source 5 drain 6 drain 1 3 5 6 2 4 pin configuration circuit sot-26(top view) ELM16404EA-S general description features maximum absolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction-to-ambient t10s rja 45.0 62.5 c /w 1 maximum junction-to-ambient steady-state 70.0 110.0 c /w maximum junction-to-lead steady-state rjl 33.0 50.0 c /w 3 parameter symbol limit unit note drain-source voltage vds 20 v gate-source voltage vgs 12 v continuous drain current ta=25c id 8.6 a 1 ta=70c 6.8 pulsed drain current idm 30 a 2 power dissipation ta=25c pd 2.00 w 1 ta=70c 1.28 junction and storage temperature range tj, tstg -55 to 150 c ELM16404EA-S uses advanced trench technology to provide excellent rds(on), low gate charge and operation with gate voltages as low as 1.8v and internal esd protection is included. ? vds=20v ? id=8.6a (vgs=10v) ? rds(on) < 17m (vgs=10v) ? rds(on) < 18m (vgs=4.5v) ? rds(on) < 24m (vgs=2.5v) ? rds(on) < 33m (vgs=1.8v) ? esd rating : 2000v hbm g d s
2 ELM16404EA-S electrical characteristics parameter symbol condition min. typ. max. unit static parameters drain-source breakdown voltage bvdss id=250a, vgs=0v 20 v zero gate voltage drain current idss vds=16v, vgs= 0v 10 a tj=55c 25 gate-body leakage current igss vds=0v, vgs= 10v 10 a gate-source breakdown voltage bvgso vds=0v, ig= 250 a 12 v gate threshold voltage vgs(th) vds=vgs, id=250 a 0.50 0.75 1.00 v on state drain current id(on) vgs=4.5v, vds=5v 30 a static drain-source on-resistance rds(on) vgs=10v, id= 8.5a 13.4 17.0 m tj = 125c 16.0 20.0 vgs = 4.5v, id =5 a 14.8 18.0 m vgs = 2.5v, id =4 a 18.8 24.0 m vgs = 1.8v, id =3 a 25.5 33.0 m forward transconductance gfs vds = 5v, id =8 a 36 s diode forward voltage vsd is = 1a, vgs=0v 0.73 1.00 v max. body -diode continuous current is 2.9 a dynamic parameters input capacitance ciss vgs=0v, vds=10v, f=1mhz 1810 pf output capacitance coss 232 pf reverse transfer capacitance crss 200 pf gate resistance rg vgs = 0v, vds = 0v, f = 1mhz 1.6 switching parameters total gate charge qg vgs=4.5v, vds=10v, id=8.5a 17.9 nc gate-source charge qgs 1.5 nc gate-drain charge qgd 4.7 nc turn - on delay time td(on) vgs=10v, vds=10v rl=1.2, rgen=3 2.5 ns turn - on rise time tr 7.2 ns turn - off delay time td(off) 49.0 ns turn - off fall time tf 10.8 ns body diode reverse recovery time trr if =8.5 a, dl/dt = 100a/s 22.0 ns body diode reverse recovery charge qrr if =8.5 a, dl/dt = 100a/s 9.8 nc 4 - single n-channel mosfet note : 1. 2. 3. 4. 5. the value of rja is measured with the device mounted on 1in2 fr-4 board of 2oz. copper, in still air environment with ta=25 c . the value in any given applications depends on the users speci?c board design, the current rating is based on the t 10s themal resistance rating. repetitive rating, pulse width limited by junction temperature. the rja is the sum of the thermal impedance from junction to lead rjl and lead to ambient. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5%max. these tests are performed with the device mounted on 1in2 fr-4 board with 2oz. copper, in a still air environment with ta=25 c . the soa curve provides a single pulse rating. ta=25 c
3 typical electrical and thermal characteristics 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a ) vgs =1.5v 2v 2.5v 4.5v 10 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 vgs (volts) figure 2: transfer characteristics i d (a) 5 10 15 20 25 30 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage rds(on) (m ? ) 0.00001 0.0001 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 vsd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance vgs =10v vgs =4.5v vgs =2.5v 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 vgs (volts) figure 5: on-resistance vs. gate-source voltage rds(on) (m ? ) 25c 125c v d s=5v vgs =2.5v vgs =4.5v vgs =10v i d =5a vgs =1.8v vgs =1.8v 25c 125c i d =5a ELM16404EA-S 4 - single n-channel mosfet
4 0 1 2 3 4 5 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics vgs (v olts) 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ? ja normalized transient t h ermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (a mps) figure 9: maximum forward biased safe operating area (note e) 100 ? s 10ms 1ms 0.1s 1s dc rds(on) limited tj(max) =150c t a =25c vds =10v i d =8a single pulse d=ton / t t j ,pk =t a +p dm .z ? ja .r ? ja r ? ja =62.5c/w ton t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse tj(max) =150c t a =25c 10 ? s ELM16404EA-S 4 - single n-channel mosfet
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